FCP4N60
RoHS

FCP4N60

FCP4N60

onsemi

MOSFET N-CH 600V 3.9A TO220-3

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FCP4N60

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Specifications
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesSuperFET™
Rds On (Max) @ Id, Vgs1.2 Ohm @ 2A, 10V
Power Dissipation (Max)50W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time52 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs16.6nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 3.9A (Tc) 50W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)