FCPF650N80Z
RoHS

FCPF650N80Z

FCPF650N80Z

onsemi

MOSFET N-CH 800V 8A TO220F

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FCPF650N80Z

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Specifications
Vgs(th) (Max) @ Id4.5V @ 800µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesSuperFET® II
Rds On (Max) @ Id, Vgs650 mOhm @ 4A, 10V
Power Dissipation (Max)30.5W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1565pF @ 100V
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 8A (Tc) 30.5W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C8A (Tc)