FDC855N
RoHS

FDC855N

FDC855N

onsemi

MOSFET N-CH 30V 6.1A SUPERSOT6

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FDC855N

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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSuperSOT™-6
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs27 mOhm @ 6.1A, 10V
Power Dissipation (Max)1.6W (Ta)
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Other NamesFDC855NTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds655pF @ 15V
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)