FDS4685
RoHS

FDS4685

FDS4685

onsemi

MOSFET P-CH 40V 8.2A 8SOIC

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FDS4685

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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs27 mOhm @ 8.2A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesFDS4685CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time20 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1872pF @ 20V
Gate Charge (Qg) (Max) @ Vgs27nC @ 5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)40V
Detailed DescriptionP-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C8.2A (Ta)