FDS6673BZ
RoHS

FDS6673BZ

FDS6673BZ

onsemi

MOSFET P-CH 30V 14.5A 8SOIC

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FDS6673BZ

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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs7.8 mOhm @ 14.5A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingOriginal-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesFDS6673BZDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time15 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds4700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs124nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C14.5A (Ta)