FDU6680
RoHS

FDU6680

FDU6680

onsemi

MOSFET N-CH 30V 12A IPAK

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FDU6680

Availability: 19666 pieces
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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageIPAK (TO-251)
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs10 mOhm @ 12A, 10V
Power Dissipation (Max)3.3W (Ta), 56W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25°C12A (Ta), 46A (Tc)