FQB30N06LTM
RoHS

FQB30N06LTM

FQB30N06LTM

onsemi

MOSFET N-CH 60V 32A D2PAK

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FQB30N06LTM

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Specifications
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs35 mOhm @ 16A, 10V
Power Dissipation (Max)3.75W (Ta), 79W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFQB30N06LTM-ND FQB30N06LTMTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time5 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 32A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C32A (Tc)