FQD8P10TM
RoHS

FQD8P10TM

FQD8P10TM

onsemi

MOSFET P-CH 100V 6.6A DPAK

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FQD8P10TM

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Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesQFET®
Rds On (Max) @ Id, Vgs530 mOhm @ 3.3A, 10V
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFQD8P10TM-ND FQD8P10TMTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time25 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionP-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)