FQP22N30
RoHS

FQP22N30

FQP22N30

onsemi

MOSFET N-CH 300V 21A TO220-3

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FQP22N30

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Specifications
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesQFET®
Rds On (Max) @ Id, Vgs160 mOhm @ 10.5A, 10V
Power Dissipation (Max)170W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time4 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)300V
Detailed DescriptionN-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C21A (Tc)