FQT1N60CTF-WS
RoHS

FQT1N60CTF-WS

FQT1N60CTF-WS

onsemi

MOSFET N-CH 600V 200MA SOT223-4

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FQT1N60CTF-WS

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Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSOT-223-4
SeriesQFET®
Rds On (Max) @ Id, Vgs11.5 Ohm @ 100mA, 10V
Power Dissipation (Max)2.1W (Tc)
PackagingOriginal-Reel®
Package / CaseTO-261-4, TO-261AA
Other NamesFQT1N60CTF-WSDKR FQT1N60CTF_WSDKR FQT1N60CTF_WSDKR-ND
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time14 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4
Current - Continuous Drain (Id) @ 25°C200mA (Tc)