MTW32N20E
RoHS

MTW32N20E

MTW32N20E

onsemi

MOSFET N-CH 200V 32A TO247

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MTW32N20E

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Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-247
Series-
Rds On (Max) @ Id, Vgs75 mOhm @ 16A, 10V
Power Dissipation (Max)180W (Tc)
PackagingTube
Package / CaseTO-247-3
Other NamesMTW32N20EOS
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds5000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C32A (Tc)