NTD4809NHT4G
RoHS

NTD4809NHT4G

NTD4809NHT4G

onsemi

MOSFET N-CH 30V 9.6A/58A DPAK

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NTD4809NHT4G

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Specifications
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDPAK
Series-
Rds On (Max) @ Id, Vgs9 mOhm @ 30A, 10V
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesNTD4809NHT4G-ND NTD4809NHT4GOSTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2155pF @ 12V
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 58A (Tc)