NTD6416ANLT4G
RoHS

NTD6416ANLT4G

NTD6416ANLT4G

onsemi

MOSFET N-CH 100V 19A DPAK

Download Datasheet

NTD6416ANLT4G

Availability: 22368 pieces
Request Quotation
Specifications
Vgs(th) (Max) @ Id2.2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDPAK
Series-
Rds On (Max) @ Id, Vgs74 mOhm @ 19A, 10V
Power Dissipation (Max)71W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesNTD6416ANLT4G-ND NTD6416ANLT4GOSTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time20 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C19A (Tc)