NTMFS5832NLT1G
RoHS

NTMFS5832NLT1G

NTMFS5832NLT1G

onsemi

MOSFET N-CH 40V 20A/111A 5DFN

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NTMFS5832NLT1G

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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package5-DFN (5x6) (8-SOFL)
Series-
Rds On (Max) @ Id, Vgs4.2 mOhm @ 20A, 10V
Power Dissipation (Max)3.1W (Ta), 96W (Tc)
PackagingCut Tape (CT)
Package / Case8-PowerTDFN, 5 Leads
Other NamesNTMFS5832NLT1GOSCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time42 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)40V
Detailed DescriptionN-Channel 40V 20A (Ta), 111A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C20A (Ta), 111A (Tc)