NTR1P02LT1G
RoHS

NTR1P02LT1G

NTR1P02LT1G

onsemi

MOSFET P-CH 20V 1.3A SOT23-3

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NTR1P02LT1G

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Specifications
Vgs(th) (Max) @ Id1.25V @ 250µA
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSOT-23-3 (TO-236)
Series-
Rds On (Max) @ Id, Vgs220 mOhm @ 750mA, 4.5V
Power Dissipation (Max)400mW (Ta)
PackagingOriginal-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Other NamesNTR1P02LT1GOSDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time50 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds225pF @ 5V
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)