IRFD210
| Part No | IRFD210 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 200V 600MA 4-DIP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18771
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0374 | |
| 10 | 1.0167 | |
| 100 | 0.9855 | |
| 1000 | 0.9544 | |
| 10000 | 0.9129 |
Specifications
| Vgs(th) (Max) @ Id | 4V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Series | - |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 360mA, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Packaging | Tube |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Other Names | *IRFD210 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Detailed Description | N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
