SI1304BDL-T1-E3
| Part No | SI1304BDL-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 0.9A SOT323-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19159
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get Quotation! | - |
| 10 | Get Quotation! | - |
| 100 | Get Quotation! | - |
| 1000 | Get Quotation! | - |
| 10000 | Get Quotation! | - |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.3462 mm |
| Height | 990.6 µm |
| Length | 2.1844 mm |
| Fall Time | 30 ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rise Time | 30 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 270 mΩ |
| Resistance | 270 mΩ |
| Nominal Vgs | 1.3 V |
| Case/Package | SC |
| Number of Pins | 3 |
| Input Capacitance | 100 pF |
| Power Dissipation | 340 mW |
| Threshold Voltage | 1.3 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5 ns |
| Element Configuration | Single |
| Max Power Dissipation | 370 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 270 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 850 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
