SI2301BDS-T1-E3
RoHS

SI2301BDS-T1-E3

SI2301BDS-T1-E3

Vishay

MOSFET P-CH 20V 2.2A SOT23-3

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SI2301BDS-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time40 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time40 ns
REACH SVHCUnknown
Rds On Max100 mΩ
Resistance100 MΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Nominal Vgs-950 mV
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance375 pF
Power Dissipation700 mW
Threshold Voltage-950 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation700 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-2.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V