SI2308BDS-T1-E3
| Part No | SI2308BDS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 2.3A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
21065
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4399 | |
| 10 | 0.4311 | |
| 100 | 0.4179 | |
| 1000 | 0.4047 | |
| 10000 | 0.3871 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Fall Time | 16 ns |
| Lead Free | Lead Free |
| Rise Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 54 mΩ |
| Resistance | 156 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Input Capacitance | 190 pF |
| Power Dissipation | 1.09 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 4 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.14 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 130 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1.9 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
