SI2309DS-T1-E3
| Part No | SI2309DS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 60V 1.25A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
22548
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4929 | |
| 10 | 0.483 | |
| 100 | 0.4683 | |
| 1000 | 0.4535 | |
| 10000 | 0.4338 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Current | 12 A |
| Voltage | 60 V |
| Fall Time | 11.5 ns |
| Lead Free | Lead Free |
| Rise Time | 11.5 ns |
| Rds On Max | 340 mΩ |
| Resistance | 340 mΩ |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Power Dissipation | 1.25 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10.5 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.5 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.25 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 340 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -1.25 A |
| Drain to Source Voltage (Vdss) | -60 V |
| Drain to Source Breakdown Voltage | -60 V |
