SI2319DS-T1-E3
RoHS

SI2319DS-T1-E3

SI2319DS-T1-E3

Vishay

MOSFET P-CH 40V 2.3A SOT23-3

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SI2319DS-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current3 A
Voltage40 V
Fall Time15 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time15 ns
REACH SVHCUnknown
Rds On Max82 mΩ
Resistance82 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance470 pF
Power Dissipation750 mW
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance82 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-2.3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V