SI2321DS-T1-E3
RoHS

SI2321DS-T1-E3

SI2321DS-T1-E3

Vishay

MOSFET P-CH 20V 2.9A SOT-23

Download Datasheet

SI2321DS-T1-E3

Availability: 18615 pieces
Request Quotation
Specifications
RoHSCompliant
MountSurface Mount
Fall Time35 ns
Lead FreeLead Free
Rise Time35 ns
Rds On Max57 mΩ
Resistance57 mΩ
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance715 pF
Power Dissipation710 mW
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation710 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance57 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)2.9 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V