SI2328DS-T1-GE3
| Part No | SI2328DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 1.15A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16592
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6972 | |
| 10 | 0.6833 | |
| 100 | 0.6623 | |
| 1000 | 0.6414 | |
| 10000 | 0.6135 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape (CT) |
| Rise Time | 11 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 250 mΩ |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Power Dissipation | 730 mW |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9 ns |
| Element Configuration | Single |
| Max Power Dissipation | 730 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 250 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1.15 A |
| Drain to Source Voltage (Vdss) | 100 V |
