SI2333DS-T1-GE3
| Part No | SI2333DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 12V 4.1A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15975
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7221 | |
| 10 | 0.7077 | |
| 100 | 0.686 | |
| 1000 | 0.6643 | |
| 10000 | 0.6354 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 1.437803 g |
| Fall Time | 60 ns |
| REACH SVHC | Unknown |
| Rds On Max | 32 mΩ |
| Nominal Vgs | -1 V |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Input Capacitance | 1.1 nF |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72 ns |
| Element Configuration | Single |
| Max Power Dissipation | 750 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 32 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 4.1 A |
| Drain to Source Voltage (Vdss) | -12 V |
