SI2347DS-T1-GE3
| Part No | SI2347DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 5A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
20087
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4551 | |
| 10 | 0.446 | |
| 100 | 0.4323 | |
| 1000 | 0.4187 | |
| 10000 | 0.4005 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Rise Time | 6 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 42 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Input Capacitance | 705 pF |
| Power Dissipation | 1.7 W |
| Threshold Voltage | -2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 68 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 3.8 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | -30 V |
