SI2399DS-T1-GE3
| Part No | SI2399DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 6A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18519
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4018 | |
| 10 | 0.3938 | |
| 100 | 0.3817 | |
| 1000 | 0.3697 | |
| 10000 | 0.3536 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel (TR) |
| Rise Time | 20 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 34 mΩ |
| Schedule B | 8541290080 |
| Nominal Vgs | -600 mV |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Input Capacitance | 835 pF |
| Power Dissipation | 1.25 W |
| Threshold Voltage | -600 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 22 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28 ns |
| Max Power Dissipation | 2.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 28 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | -6 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -20 V |
| Drain to Source Breakdown Voltage | -20 V |
