SI3417DV-T1-GE3
RoHS

SI3417DV-T1-GE3

SI3417DV-T1-GE3

Vishay

MOSFET P-CH 30V 8A TSOP-6

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SI3417DV-T1-GE3

Availability: 16019 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Weight19.986414 mg
Fall Time16 ns
Rise Time35 ns
Rds On Max25.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance1.35 nF
Power Dissipation2 W
Number of Channels1
Number of Elements1
Turn-On Delay Time42 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance30 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V