SI3442BDV-T1-E3
RoHS

SI3442BDV-T1-E3

SI3442BDV-T1-E3

Vishay

MOSFET N-CH 20V 3A 6-TSOP

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SI3442BDV-T1-E3

Availability: 17517 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time15 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time50 ns
REACH SVHCNo SVHC
Rds On Max57 mΩ
Resistance57 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1.8 V
Case/PackageTSOP
Number of Pins6
Input Capacitance295 pF
Power Dissipation20 mW
Threshold Voltage1.8 V
Number of Channels1
Number of Elements1
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation860 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance90 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V