SI3456BDV-T1-E3
RoHS

SI3456BDV-T1-E3

SI3456BDV-T1-E3

Vishay

MOSFET N-CH 30V 4.5A 6-TSOP

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SI3456BDV-T1-E3

Availability: 22654 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width1.7018 mm
Height990.6 µm
Length3.0988 mm
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max35 mΩ
Case/PackageTSOP
Number of Pins6
Power Dissipation1.1 W
Threshold Voltage3 V
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance35 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V