SI3457CDV-T1-E3
| Part No | SI3457CDV-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 5.1A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
22426
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7068 | |
| 10 | 0.6927 | |
| 100 | 0.6715 | |
| 1000 | 0.6503 | |
| 10000 | 0.622 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.65 mm |
| Height | 1 mm |
| Length | 3.05 mm |
| Weight | 19.986414 mg |
| Fall Time | 12 ns |
| Lead Free | Lead Free |
| Rise Time | 80 ns |
| Rds On Max | 74 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 450 pF |
| Power Dissipation | 2 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 60 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -4.1 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | -30 V |
