SI4162DY-T1-GE3
RoHS

SI4162DY-T1-GE3

SI4162DY-T1-GE3

Vishay

MOSFET N-CH 30V 19.3A 8-SOIC

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SI4162DY-T1-GE3

Availability: 22596 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time15 ns
REACH SVHCNo SVHC
Rds On Max7.9 mΩ
Resistance7.9 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.155 nF
Power Dissipation2.5 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.6 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V