SI4166DY-T1-GE3
| Part No | SI4166DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 30.5A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
22809
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.33 | |
| 10 | 1.3034 | |
| 100 | 1.2635 | |
| 1000 | 1.2236 | |
| 10000 | 1.1704 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Rise Time | 19 ns |
| REACH SVHC | Unknown |
| Rds On Max | 3.9 mΩ |
| Resistance | 3.9 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 2.73 nF |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 30 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35 ns |
| Max Power Dissipation | 6.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 4.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 20.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
