SI4682DY-T1-E3
RoHS

SI4682DY-T1-E3

SI4682DY-T1-E3

Vishay

MOSFET N-CH 30V 16A 8-SOIC

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SI4682DY-T1-E3

Availability: 19082 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Rise Time55 ns
Rds On Max9.4 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.595 nF
Power Dissipation2.5 W
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time23 ns
Element ConfigurationSingle
Max Power Dissipation4.45 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.4 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)12 A
Drain to Source Voltage (Vdss)30 V