SI4835DDY-T1-E3
RoHS

SI4835DDY-T1-E3

SI4835DDY-T1-E3

Vishay

MOSFET P-CH 30V 13A 8-SOIC

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SI4835DDY-T1-E3

Availability: 22764 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Lead FreeLead Free
Rise Time100 ns
REACH SVHCUnknown
Rds On Max3 Ω
Resistance18 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance360 pF
Power Dissipation2.5 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time44 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)8.7 A
Drain to Source Voltage (Vdss)500 V
Drain to Source Breakdown Voltage-30 V