SI4850EY-T1-E3
RoHS

SI4850EY-T1-E3

SI4850EY-T1-E3

Vishay

MOSFET N-CH 60V 6A 8-SOIC

Download Datasheet

SI4850EY-T1-E3

Availability: 42997 pieces
Request Quotation
Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Current6 A
Voltage60 V
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCUnknown
Rds On Max22 mΩ
Resistance22 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.7 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Voltage Rating (DC)60 V
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance22 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V