SI5445BDC-T1-E3
| Part No | SI5445BDC-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 8V 5.2A 1206-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15556
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1333 | |
| 10 | 0.1306 | |
| 100 | 0.1266 | |
| 1000 | 0.1226 | |
| 10000 | 0.1173 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.7018 mm |
| Height | 1.0922 mm |
| Length | 3.0988 mm |
| Fall Time | 22 ns |
| Lead Free | Lead Free |
| Rise Time | 22 ns |
| Rds On Max | 33 mΩ |
| Resistance | 33 mΩ |
| Schedule B | 8541290080 |
| Case/Package | SMD/SMT |
| Number of Pins | 8 |
| Power Dissipation | 1.3 W |
| Number of Elements | 1 |
| Turn-On Delay Time | 12 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 33 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 5.2 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drain to Source Breakdown Voltage | -8 V |
