SI5445BDC-T1-E3
RoHS

SI5445BDC-T1-E3

SI5445BDC-T1-E3

Vishay

MOSFET P-CH 8V 5.2A 1206-8

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SI5445BDC-T1-E3

Availability: 15556 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width1.7018 mm
Height1.0922 mm
Length3.0988 mm
Fall Time22 ns
Lead FreeLead Free
Rise Time22 ns
Rds On Max33 mΩ
Resistance33 mΩ
Schedule B8541290080
Case/PackageSMD/SMT
Number of Pins8
Power Dissipation1.3 W
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time75 ns
Element ConfigurationSingle
Max Power Dissipation1.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance33 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)5.2 A
Drain to Source Voltage (Vdss)8 V
Drain to Source Breakdown Voltage-8 V