SI5475DDC-T1-GE3
| Part No | SI5475DDC-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 12V 6A 1206-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16337
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get Quotation! | - |
| 10 | Get Quotation! | - |
| 100 | Get Quotation! | - |
| 1000 | Get Quotation! | - |
| 10000 | Get Quotation! | - |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.65 mm |
| Height | 1.1 mm |
| Length | 3.05 mm |
| Weight | 84.99187 mg |
| Current | 6 A |
| Voltage | 12 V |
| Fall Time | 40 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 40 ns |
| REACH SVHC | Unknown |
| Rds On Max | 32 mΩ |
| Resistance | 32 mΩ |
| Case/Package | SMD/SMT |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 1.6 nF |
| Power Dissipation | 1.2 W |
| Threshold Voltage | -400 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 32 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drain to Source Breakdown Voltage | -12 V |
