SI7110DN-T1-GE3
RoHS

SI7110DN-T1-GE3

SI7110DN-T1-GE3

Vishay

MOSFET N-CH 20V 13.5A 1212-8

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SI7110DN-T1-GE3

Inventory: 23878
Pricing
QTY UNIT PRICE EXT PRICE
1+ 1.7138
10+ 1.6795
100+ 1.6281
1000+ 1.5767
10000+ 1.5081
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Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max5.3 mΩ
Number of Pins8
Threshold Voltage2.5 V
Number of Channels1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time36 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.3 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.5 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V