SI7119DN-T1-E3
| Part No | SI7119DN-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 200V 3.8A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18101
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9797 | |
| 10 | 0.9601 | |
| 100 | 0.9307 | |
| 1000 | 0.9013 | |
| 10000 | 0.8621 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 12 ns |
| Lead Free | Lead Free |
| Rise Time | 11 ns |
| Rds On Max | 1.05 Ω |
| Resistance | 1.05 Ω |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 666 pF |
| Power Dissipation | 3.7 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Single |
| Max Power Dissipation | 52 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 1.05 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1.2 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drain to Source Breakdown Voltage | -200 V |
