SI7139DP-T1-GE3
RoHS

SI7139DP-T1-GE3

SI7139DP-T1-GE3

Vishay

MOSFET P-CH 30V 40A PPAK SO-8

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SI7139DP-T1-GE3

Availability: 15595 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Height1.17 mm
Weight506.605978 mg
Lead FreeLead Free
REACH SVHCUnknown
Rds On Max5.5 mΩ
Resistance5.5 mΩ
Schedule B8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance4.23 nF
Power Dissipation5 W
Threshold Voltage-1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Radiation HardeningNo
Turn-Off Delay Time56 ns
Element ConfigurationSingle
Max Power Dissipation48 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.2 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-40 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage-30 V