SI7148DP-T1-E3
| Part No | SI7148DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 75V 28A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
24512
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.162 | |
| 10 | 2.1188 | |
| 100 | 2.0539 | |
| 1000 | 1.989 | |
| 10000 | 1.9026 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 100 ns |
| Lead Free | Lead Free |
| Rise Time | 255 ns |
| REACH SVHC | Unknown |
| Rds On Max | 11 mΩ |
| Resistance | 11 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 2 V |
| Termination | SMD/SMT |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 2.9 nF |
| Power Dissipation | 5.4 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17 ns |
| Dual Supply Voltage | 75 V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5.4 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9.1 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 28 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 75 V |
| Manufacturer Package Identifier | S17-0173-Single |
| Drain to Source Breakdown Voltage | 75 V |
