SI7308DN-T1-GE3
| Part No | SI7308DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 6A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19344
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1639 | |
| 10 | 1.1406 | |
| 100 | 1.1057 | |
| 1000 | 1.0708 | |
| 10000 | 1.0242 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 15 ns |
| REACH SVHC | Unknown |
| Rds On Max | 58 mΩ |
| Resistance | 58 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 665 pF |
| Power Dissipation | 3.2 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 58 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 5.4 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
