SI7430DP-T1-E3
| Part No | SI7430DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 150V 26A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15721
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2946 | |
| 10 | 3.2287 | |
| 100 | 3.1299 | |
| 1000 | 3.031 | |
| 10000 | 2.8992 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 7 ns |
| Lead Free | Lead Free |
| Rise Time | 12 ns |
| REACH SVHC | Unknown |
| Rds On Max | 45 mΩ |
| Resistance | 45 mΩ |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 1.735 nF |
| Power Dissipation | 5.2 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 45 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 26 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drain to Source Breakdown Voltage | 150 V |
