SI7434DP-T1-GE3
RoHS

SI7434DP-T1-GE3

SI7434DP-T1-GE3

Vishay

MOSFET N-CH 250V 2.3A PPAK SO-8

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SI7434DP-T1-GE3

Inventory: 19579
Pricing
QTY UNIT PRICE EXT PRICE
1+ 2.4462
10+ 2.3973
100+ 2.3239
1000+ 2.2505
10000+ 2.1527
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Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time23 ns
Rise Time23 ns
REACH SVHCUnknown
Rds On Max155 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance155 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.3 A
Drain to Source Voltage (Vdss)250 V
Drain to Source Breakdown Voltage250 V