SI7456DP-T1-E3
RoHS

SI7456DP-T1-E3

SI7456DP-T1-E3

Vishay

MOSFET N-CH 100V 5.7A PPAK SO-8

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SI7456DP-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Resistance25 mΩ
Schedule B8541290080
Nominal Vgs2 V
Number of Pins8
Contact PlatingTin
Power Dissipation5.2 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time46 ns
Element ConfigurationSingle
Max Power Dissipation5.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.7 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V