SI7655DN-T1-GE3
RoHS

SI7655DN-T1-GE3

SI7655DN-T1-GE3

Vishay

MOSFET P-CH 20V 40A PPAK 1212

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SI7655DN-T1-GE3

Availability: 15442 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width3.3 mm
Height780 µm
Length3.3 mm
PackagingTape & Reel (TR)
REACH SVHCNo SVHC
Rds On Max3.6 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance6.6 nF
Power Dissipation4.8 W
Threshold Voltage-500 mV
Number of Channels2
Number of Elements1
Turn-On Delay Time45 ns
Radiation HardeningNo
Turn-Off Delay Time110 ns
Element ConfigurationDual
Max Power Dissipation57 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance3.6 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-40 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V