SI7716ADN-T1-GE3
RoHS

SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

Vishay

MOSFET N-CH 30V 16A 1212-8

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SI7716ADN-T1-GE3

Availability: 34565 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Resistance13.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance846 pF
Power Dissipation3.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Max Power Dissipation27.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance10.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)16 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V