SI7726DN-T1-GE3
| Part No | SI7726DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 35A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
23138
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.306 | |
| 10 | 0.2999 | |
| 100 | 0.2907 | |
| 1000 | 0.2815 | |
| 10000 | 0.2693 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 14 ns |
| Rise Time | 10 ns |
| Rds On Max | 9.5 mΩ |
| Nominal Vgs | 2.6 V |
| Number of Pins | 8 |
| Input Capacitance | 1.765 nF |
| Power Dissipation | 3.8 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 23 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27 ns |
| Max Power Dissipation | 3.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 9.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 14.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
