SI7858ADP-T1-E3
| Part No | SI7858ADP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 12V 20A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
20279
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4816 | |
| 10 | 2.432 | |
| 100 | 2.3575 | |
| 1000 | 2.2831 | |
| 10000 | 2.1838 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 70 ns |
| Lead Free | Lead Free |
| Rise Time | 40 ns |
| Rds On Max | 2.6 mΩ |
| Resistance | 2.6 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 5.7 nF |
| Power Dissipation | 1.9 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 40 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.9 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.6 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 20 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drain to Source Breakdown Voltage | 12 V |
