SI7898DP-T1-E3
RoHS

SI7898DP-T1-E3

SI7898DP-T1-E3

Vishay

MOSFET N-CH 150V 3A PPAK SO-8

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SI7898DP-T1-E3

Availability: 15797 pieces
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Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max85 mΩ
Resistance85 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time24 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance68 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)150 V